Advanced Microscopy of Compound Semiconductors Webinar

In recent years there has been an explosion of consumer electronics that utilize a variety of communication and sensing technologies that are primarily based on compound semiconductors (CS). CS are an important class of materials that are formed by the combination of two or more elements, typically from different groups of the periodic table, such as Gallium Arsenide (GaAs), or Indium Phosphide (InP).  They exhibit unique electronic and optical properties that can be engineered at the atomic level through careful control of the constituent elements and structure. Microscopy is a powerful tool that can provide critical information regarding the structure and composition of CS at the micro and nanoscale. 

In this webinar, we will explore the variety of microscopy techniques available at Eurofins EAG commonly utilized to characterize CS materials and devices including transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM), focused ion beam (FIB), scanning electron microscopy (SEM), X-Ray analysis (EDS) and Electron Energy Loss Spectroscopy (EELS). Additionally, I will introduce some of our typical failure analysis (FA) strategies along with complementary techniques such as Cathodoluminescence (CL), electron beam induced current (EBIC) and electroluminescence (EL).  The advantages and limitations of each technique will be discussed, along with the types of information that can be obtained from each method. Additionally, the importance of understanding the structural and compositional properties of compound semiconductors in various applications such as lasers, LEDs, and power devices will be emphasized.