Cathodoluminescence (CL) is electromagnetic radiation, or light, ranging from visible (VIS) to near-infrared (NIR) created by the interaction of high-energy electrons (cathode rays) with a luminescent material. The light that is emitted carries very specific information about the optical and electronic properties of the sample.
Using a specialized Scanning Electron Microscope (SEM) that has visible light collection, corresponding sample structure (SE) and CL emission maps can be acquired simultaneously with sub-micrometer resolution. In some cases, the CL spatial resolution can be as good as 30-50 nm. CL mapping can be performed on both cross-sections (XS) or in plan-view (PV) to characterize a sample’s localized composition, doping, structure and defects, all with very high spatial resolutions.
Semiconductor failure analysis – defect localization within devices for deeper failure analysis (FA)
Strengths of Cathodoluminescence
Provides highly localized information about materials optical and electronic properties
Does not require electrical connections
Limitations of Cathodoluminescence
Requires a luminescent material – semiconductors, polymers, insulators, metal photonic structures
Smaller samples required, no full wafers larger than 1” dia – 3 mm height restriction
Large amounts of topography, especially non-uniform surface roughness, can make CL collection and contrast interpretation more difficult. Smooth samples are preferred
Thick (μms) metal contacts on the surface of a device must be removed before analysis. This can be often done by careful chemical etching or in specific regions by Focused Ion Beam (FIB)
Localized dopant characterization is possible but requires careful choice of standards
SEM-CL Technical Specifications
Signals Detected: Simultaneous Secondary Electrons (SE) and Cathodoluminescence (CL)
Wavelengths Detected: 250-1500 nm
Imaging/Mapping: Yes
Lateral Resolution: Typically varies from 20-500 nm depending on SEM conditions and sample composition/topology
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