A materials analysis study into FinFET technology
We provide a materials analysis study into the comparison between 22 nm node and 7 nm node FinFET technologies, using TEM-based techniques.
A TEM-based Materials Analysis Study into 22nm FinFET Technology
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
Atomic-Resolution Secondary Electron Imaging
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
Characterization of Beach Sand Using WDXRF and XRD
WDXRF and XRD are two powerful tools that allow us to obtain detailed characterization of materials, covering both the elemental composition and crystalline phases present.
Depth Profile Characterization of Low-K Materials Using Secondary Ion Mass Spectrometry
SIMS depth profile characterization provides accurate quantification for all measured species and matrix using our unique reference materials
Material structural analysis power of PED at nanometer scale
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
MicroXRD: Small Area Analysis of Single Grains of Sand
Microdiffraction can be used to identify crystalline inclusions in glass, look at film texture in a test pad on an integrated circuit, identify a single particle found in an air filter, or to identify the phosphor used in an LED.
PED Webinar
In this webinar we introduce Precession Electron Diffraction (PED) which has been essential to nano-scale structural analysis
Point-by-Point CORrected-SIMS (PCOR-SIMS) Services
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
Rutherford Backscattering Spectrometry (RBS) Services
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
Secondary Ion Mass Spectrometry (SIMS) Services
SIMS services from EAG is featured in this technique note, including sample data, showing how SIMS detects low concentrations of impurities
Secondary Ion Mass Spectrometry Survey Depth Profile
Survey-SIMS Depth Profiles analyze for dopants & impurities in a material without having prior knowledge in the structure being evaluated.
Semiconductor Stress Measurements by Raman Spectroscopy
Semiconductor stress measurements by Raman Spectroscopy helps control problems related to stress control in semiconductor devices, from EAG.
Silicon Carbide – A Powerful Semiconductor for the Future
Silicon carbide is increasingly considered a potential replacement for traditional silicon semiconductors due to its superior properties.
Silicon Wafer PV – Application Discussion
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
SIMS Analysis of Individual SiC Particles for Accurate Bulk Concentration Measurement
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
SIMS Analysis Tips – What is the effect of mass interference?
Secondary ion mass spectra measured by SIMS may not always provide information from the target element alone.
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions SIMS is a powerful analytical technique which allows detection of all
SIMS Detection Limits of Selected Elements in Si Under Bulk Analysis Conditions
SIMS detection limits of selected elements in Silicon, providing a a list of detection limits for typical dopants and impurities
SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
SIMS Measurements of Silicon Carbide
Silicon Carbide SIMS Measurements provide valuable data for process control and problem solving in wafer growth and device manufacturing.
Surface Analysis of α-Si, µc-Si Thin Film PV
Surface analysis lab techniques on α-Si thin film PV, microcrystalline Si, nanocrystalline Si, amorphous SiGe, & microcrystalline SiC
TEM Webinar
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
The Total Solution For Surface Contamination Measurements
TXRF AND SURFACESIMS.XP is the total solution for surface contamination measurements on semiconductor surfaces, from EAG Laboratories.
Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by STEM-EELS
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Types of crystal defects that can be observed with TEM
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Using MicroXRD to Identify the Composition of Sand
XRD analysis can be used on many scientific and technology-based applications where you may want to identify the crystalline material in a very small area or volume, such as glass defects or inclusions, integrated circuits, LEDs and more.
XPS Analysis of Disposable Gloves
XPS Analysis of Disposable Gloves assesses materials exposed during product manufacturing to make sure contamination is not introduced.