Advanced Microscopy of Compound Semiconductors
In this webinar, we will explore the variety of microscopy techniques available at Eurofins EAG commonly utilized to characterize compound semiconductor materials.
Advances with Gallium Oxide
Gallium oxide has the potential to replace or substitute gallium nitride for power conversion in electric trains and vehicles.
Aerospace Materials Testing for Tunnel Junction Solar Cells
Aerospace Materials Testing for Tunnel Junction Solar Cells Science has opened many doors in its advancement over the centuries.
Analysis of GaAs pHEMT & GaN HEMT Webinar
In the full webinar we will focus on the PCOR-SIMS Analysis of GaAs pHEMT and GaN HEMT using Secondary Ion Mass Spectrometry
Analyzing Vertical Cavity Surface Emitting Lasers Webinar
In the full webinar we will introduce analyzing VCSELs with a focus on secondary ion mass spectrometry (SIMS)
Ask the Expert: Elemental Analysis with ICP
June 27, 2024
During this live Ask the Expert event, we will answer pre-submitted questions from our audience regarding Elemental Analysis with Inductively Coupled Plasma (ICP-OES, ICP-MS, LA-ICP-MS). These techniques provide full survey major, minor, trace element analysis, and purity certification for up to 69 measurable elements.
Ask the Expert: Surface Contact and Optical Metrology
During this live Ask the Expert event, we will answer pre-submitted questions from our audience regarding materials analysis with various surface contact and optical analytical techniques.
Ask the Experts: Materials Characterization of GaN Power Transistors
Demand for compound semiconductors has rapidly grown recently. During this live event we answered questions surrounding the Materials Characterization of GaN HEMT power transistors.
Assessing Local Polarity in III-Nitrides Using AC-STEM
In this application note, we show how different signals obtained through AC-STEM can provide direct observation of local polarity switching.
Atom-By-Atom Distance Measurements
In this application note, we show the possibility to extract distance information at an atom-column to atom-column basis with picometer level precision.
Atomic Resolution EDS
Advances in thin film growth has created a need for characterizing structure and chemistry at the atomic scale using EDS.
Atomic-Resolution Secondary Electron Imaging
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
Cathodoluminescence Illuminates the SEM with New Capabilities
SEM-Cathodoluminescence is used for a wide variety of luminescent materials and devices. It allows for the inspection of optical properties with sub-um spatial resolutions combined with SEM imaging having 3-5nm spatial resolution.
Characterization & Failure Analysis of Optoelectronics Webinar
In the full webinar we introduce Characterization and Failure Analysis of Optoelectronic Materials and Devices
EAG to Speak at M&M 2024
Eurofins EAG Laboratories will be presenting Automated Bandgap Measurements in Optoelectronic Devices by Monochromated Electron Energy-Loss Spectroscopy at Microscopy & Microanalysis on July 29th.
Evaluating Epitaxy Quality in Compound Semiconductors Using AC-STEM/EDS
Fine control over structural and compositional uniformity during epitaxial growth of compound semiconductors is critical for developing reliable and efficient devices.
Evaluation of Dislocation Type in GaN Using STEM
Threading dislocation evaluation of dislocation type in GaN using STEM (AN463) by EAG Laboratories supports LED development and quality.
GaAs-Based Transistors Pave the Way for Communication Efficiencies
III-V materials partially provide us with the ever evolving and changing technological advances we enjoy today.
High Depth Resolution SIMS Profiles for Compound Semiconductor Devices
Measurement of dopant & impurity concentrations in compound semiconductors by SIMS with low detection limits & excellent depth resolution.
High Resolution X-ray Diffraction (HR-XRD) Measurement of Compound Semiconductors
HR-XRD Measurement of Compound Semiconductors can be used to determine the composition of strained layers and thickness.
High Resolution XRD – Epitaxial film composition
How to determine the composition of epitaxial thin films by X-ray diffraction and will focus on the analysis of AlxGa1-xAs thin films.
Identification of Interface Contamination Using Auger Electron Spectroscopy (AES)
Auger Identification Interface Contamination is discussed regarding the elimination of contaminants for successful semiconductors.
III-V Multi-Junction PV – Application Discussion
III-V solar cell technology for concentrator PV systems is the focus of this app note, illustrating the way that surface analysis can help
LED Analysis
LED characterization, from process control to failure analysis to construction analysis, EAG Laboratories supports your LED analysis needs.
Materials Characterization for a Semiconductor Testing Customer
EAG’s material and microelectronic testing service is dedicated to providing the best information from ensuring the purity of starting materials, to prototype testing of devices in the ramp up towards full-scale production.
MicroLED Analysis Webinar
In the full webinar we introduce MicroLED Analysis for improved understanding of III-nitride material properties and growth/device processes
Microscopy Techniques in the Failure Analysis of Optoelectronics
EAG divides FA tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and root cause failure analysis.
Optical Emission Spectroscopy for Composition Analysis of Complex Oxides
Complex oxides in energy storage, catalysis, sensor/actuation, optics, epitaxy substrates, electronics, bioceramics, structural ceramics
Optimizing 2-D Electron Density in pHEMTs Using Secondary Ion Mass Spectrometry
pHEMT device analysis by SIMS improves device performance and aids in failure analysis of III-V high-speed transistor structures.
PCOR-SIMS Analysis of GaN HEMT Epitaxial Layers Grown on Silicon Substrates
Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.
Point-by-Point Corrected (PCOR) SIMS Brochure
Measure layer thickness, composition, and doping profiles more accurately than regular SIMS analysis.
Point-by-Point CORrected-SIMS (PCOR-SIMS) Services
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
Quantification of Ultrathin Layers by AC-STEM-EDS
AC-STEM-EDS analysis is explored showing the effectiveness of this technique for characterizing ultrathin layers.
Rapid Threading Dislocation Typing in GaN Using STEM
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
Reverse Engineering of Compound Semiconductor Optoelectronics
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Rutherford Backscattering Spectrometry (RBS) Services
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
Scanning Capacitance Microscopy (SCM) of a Power MOSFET
SCM provides doped region distribution mapping, profiling and dimensional analysis for the research and development, failure analysis and quality control of electronic components.
Scrutinizing VCSELs by SIMS
An advanced form of SIMS, PCOR-SIMS identifies dopants, impurities, compositions and thicknesses in various layers of VCSELs
Secondary Ion Mass Spectrometry (SIMS) Services
SIMS services from EAG is featured in this technique note, including sample data, showing how SIMS detects low concentrations of impurities
SIMS Analysis of Al and Ga Diffusion
SIMS detects very low concentrations of dopants and impurities. It has been used to study the diffusion of Al and Ga.
SIMS Analysis of Individual SiC Particles for Accurate Bulk Concentration Measurement
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
SIMS Analytical Services for Compound Semiconductor High Speed Electronics
Compound semiconductors are responsible for the explosive growth of high-speed electronics, especially in communication applications and advanced mobile appliances.
SIMS Detection Limits of Selected Elements in GaAs Under Normal Depth Profiling Conditions
SIMS Detection Limits OF Selected Elements in GaAs, with detection levels are for normal depth profiling conditions of blanket wafers.
SIMS Detection Limits of Selected Elements in GaN Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in GaN. Normal depth profiling conditions, blanket wafers. Detection levels depends on area.
SIMS Detection Limits of Selected Elements in HgCdTe Under Normal Depth Profiling Conditions
SIMS analytical technique typical detection limits for impurities in a HgCdTe matrix for normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in InP Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in InP for impurities in InP matrices with normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
SIMS Measurements of Silicon Carbide
Silicon Carbide SIMS Measurements provide valuable data for process control and problem solving in wafer growth and device manufacturing.
Surface Contamination on Compound Semiconductors
Contamination control and defect reduction are critical issues in the manufacturing process of compound semiconductor devices which can impact the performance of the end product. We can provide valuable insights to identify contaminants and characterize materials throughout the product lifecycle.
TEM Webinar
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
The Birth of PCOR-SIMS for Silicon Germanium (SiGe) Devices
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
The Importance of VCSELs in Technological Development
VCSELs have several advantages, such as a higher modulation speed, which make them great for technological innovations.
Types of crystal defects that can be observed with TEM
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Ultra-Trace Level Contaminants in materials using ETV–ICP–OES
Electrothermal vaporization (ETV) coupled with ICP-OES is an exceptionally sensitive solid sampling technique for purity verifications.
Understanding VCSELs: From Epitaxial Wafer Growth to Failure Analysis
EAG Laboratories to provide comprehensive process development and failure analysis of vertical cavity surface emitting lasers.
Uniformity is Key in Epitaxial Growth
AC-STEM analysis can provide a visual representation of non-uniformities in an active region. Roughness can easily be observed within interfaces. EDS maps can then be used to corroborate the roughness in relation to composition.
Using SIMS to Scrutinize HEMTs
HEMTs characterization using SIMS helps to uncover troublesome impurities, optimize epitaxial layer growth and aid failure analysis
Using STEM EELS to Probe Local Bonding Environment in VCSEL Oxide Apertures
Improper aperture oxidation can lead to high stress or introduce unintended defects ultimately resulting in failure. Here, we present a study using STEM EELS to provide a method for measuring differences in oxygen bonding.
What is the matrix effect?
Compound semiconductor films are grown with different matrix compositions that affect the elemental sensitivities and sputtering rates