Exploring the Capabilities of Dual-Beam FIB-SEM

The dual-beam focused ion beam (FIB) – scanning electron microscope (SEM) is an advanced tool that combines precise sample milling/preparation with high-resolution imaging. It has two columns—one for FIB (usually using a gallium ion source) and one for SEM—allowing simultaneous milling and imaging of the sample. The FIB operates with nanometer precision, performing tasks like creating cross-sections, delayering samples, and generating thin, electron-transparent lamellae samples for TEM/STEM analysis. The SEM is crucial for locating areas for FIB milling, imaging the cross-section crafted by the FIB, and monitoring sample preparation progress. Both the FIB and the SEM use a highly focused beam (Ga ion and electrons, respectively) with energies from 1 to 30 keV to scan the sample and detect secondary or backscattered electrons generated. Secondary electrons provide insights into topography, while backscattered electrons offer information on the average atomic number. The FIB’s secondary electrons and ions can create images highlighting grain structure much better than the SEM due to strong channeling effects of Ga ions used in FIB. Additionally, both the FIB and the SEM can deposit metals or insulators on the sample for precise circuit editing. This dual-beam FIB-SEM is a versatile tool applicable to studying the surface and interior of various materials, including semiconductors, polymers, metals, and ceramics.