A Deep Dive into High Powered Electronics

minimize carbon dioxide emissions and the cost of electricity.² Newer Field-Effect Transistors – or NFETs, are produced with Silicon Carbide (SiC) and Gallium Nitride (GaN). These materials have wider band gaps than preceding HPE’s produced with Silicon (Si), which help these newer HPEs to stop conductive leakages, operate at higher voltages, and manage temperatures more efficiently. They also have a higher power density at a smaller size, making them more spatially efficient. As we continue to look for ways to rely less on fossil fuels, there is higher demand for these types of power-efficient devices, prompting more companies to find ways to utilize SiC and GaN in HPEs and the continued growth of this sector of the market.³

One other material used for these devices is gallium oxide (Ga₂O₃). This is a semiconductor material with properties that make it a contender for HPE applications. It’s ultra-wide band gap (4.5 – 4.9eV) capabilities allow it to support high critical electric fields of up to 8MV/cm. Ga₂O₃ can operate at higher voltages which can increase efficiency, can support high currents and voltages with low energy losses, and can withstand high temperatures and radiation without serious degradation, making it a good choice for operating in adverse environments, such as space exploration. Lastly, Ga₂O₃ is relatively inexpensive and can be grown into high-quality films using low-cost techniques. Some potential applications for Ga₂O₃ in HPEs include electric vehicles, electric trains, and space crafts. Of note, there are some challenges with Ga₂O₃ that need to be addressed such as poor thermal conductivity, which can cause devices to overheat.