SIMS Detection Limits of Selected Elements in ZnO Under Normal Depth Profiling Conditions
SIMS is a powerful analytical technique which allows detection of all elements in ZnO with excellent sensitivity. The table provides a list of typical detection limits for impurities in a ZnO matrix. These detection levels are for normal depth profiling conditions of blanket wafers.
Figure 1 shows a Overlay of two separate SIMS profiles of an arsenic implant in ZnO. Excellent reproducibility is demonstrated in this example as well as the count-rate-limited detection limits of approximately 1e16 at/cm3.
Figure 2 shows a Overlay of multiple species in a single SIMS profile for a ZnO sample containing implants of Ti, Cr, Ni and Cu.
Would you like to learn more about SIMS Detection Limits of Elements in ZnO?
Contact us today for your SIMS detection limits of selected elements in ZnO. Please complete the form below to have an EAG expert contact you.