SIMS Detection Limits of Selected Elements in HgCdTe Under Normal Depth Profiling Conditions
Home » SIMS Detection Limits of Selected Elements in HgCdTe Under Normal Depth Profiling Conditions
SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in a HgCdTe matrix for normal depth profiling conditions. Lower detection levels can be obtained for many species under optimal analytical conditions on a case-by-case situation.
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