Point-by-Point CORrected-SIMS (PCOR-SIMSSM) Services
PCOR-SIMSSM is an EAG proprietary technique that can measure layer thickness,
composition, and doping profiles more accurately than a regular SIMS analysis,
where calibration with respect to alloy composition is not made at every data point.
The development of PCOR-SIMSSM can be traced back to the late 1990s when then, Evans Analytical Group, was faced with the challenge of acquiring accurate profiles for both dopants and matrix elements in Silicon Germanium (SiGe) materials.
Previous to this time, it was commonly assumed that the SIMS technique could not quantify matrix level concentrations, and there was no way to calibrate ion intensities as a function of change in matrix composition for quantitative analysis of multi-layer semiconductor materials.
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