Ultra-clean surfaces are critically important to the successful processing of semiconductor devices. Likewise, eliminating or reducing Al and other metal surface contamination on silicon wafers is a very critical part of IC processes. To control contaminants, it is necessary to identify and quantify them. Choosing an appropriate measurement technique is important for providing accurate and consistent results. Utilizing both TXRF and SurfaceSIMS.XP (XP = extended profile) provides the total solution with the best detection limits and value for surface contamination measurements.

The present application note highlights some important advantages of using SurfaceSIMS.XP (XP = extended profile) and TXRF to determine surface Al contamination on processed Si wafers.